 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NSI45015WT1G Constant Current Regulator & LED Driver 45 V, 15 mA + 20%, 460 mW Package The linear constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost-effective solution for regulating current in LEDs. The CCR is based on patent-pending Self-Biased Transistor (SBT) technology and regulates current over a wide voltage range. It is designed with a negative temperature coefficient to protect LEDs from thermal runaway at extreme voltages and currents. The CCR turns on immediately and is at 35% of regulation with only 0.5 V Vak. It requires no external components allowing it to be designed as a high or low-side regulator. The high anode-cathode voltage rating withstands surges common in Automotive, Industrial and Commercial Signage applications. The CCR comes in thermally robust packages and is qualified to AEC-Q101 standard. Features http://onsemi.com Ireg(SS) = 15 mA @ Vak = 7.5 V Anode 2 * * * * * * * * Robust Power Package: 460 mW Wide Operating Voltage Range Immediate Turn-On Voltage Surge Suppressing - Protecting LEDs AEC-Q101 Qualified SBT (Self-Biased Transistor) Technology Negative Temperature Coefficient These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Cathode 1 2 1 SOD-123 CASE 425 STYLE 1 Applications MARKING DIAGRAM 1 AK M G AK M G G 2 * Automobile: Chevron Side Mirror Markers, Cluster, Display & * * * * Instrument Backlighting, CHMSL, Map Light AC Lighting Panels, Display Signage, Decorative Lighting, Channel Lettering Switch Contact Wetting Application Note AND8391/D - Power Dissipation Considerations Application Note AND8349/D - Automotive CHMSL Rating Symbol Vak Max VR TJ, Tstg ESD Value 45 500 -55 to +150 Class 1C Class B Unit V mV C = Device Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) MAXIMUM RATINGS (TA = 25C unless otherwise noted) Anode-Cathode Voltage Reverse Voltage Operating and Storage Junction Temperature Range ESD Rating: Human Body Model Machine Model ORDERING INFORMATION Device NSI45015WT1G Package SOD-123 (Pb-Free) Shipping 3000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. (c) Semiconductor Components Industries, LLC, 2010 May, 2010 - Rev. 0 1 Publication Order Number: NSI45015W/D NSI45015WT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Steady State Current @ Vak = 7.5 V (Note 1) Voltage Overhead (Note 2) Pulse Current @ Vak = 7.5 V (Note 3) Capacitance @ Vak = 7.5 V (Note 4) Capacitance @ Vak = 0 V (Note 4) 1. 2. 3. 4. Symbol Ireg(SS) Voverhead Ireg(P) C C 12.7 Min 12 Typ 15 1.8 16.5 2.5 5.7 19.4 Max 18 Unit mA V mA pF pF Ireg(SS) steady state is the voltage (Vak) applied for a time duration 10 sec, using FR-4 @ 300 mm2 1 oz. Copper traces, in still air. Voverhead = Vin - VLEDs. Voverhead is typical value for 75% Ireg(SS). Ireg(P) non-repetitive pulse test. Pulse width t 300 msec. f = 1 MHz, 0.02 V RMS. Characteristic Total Device Dissipation (Note 5) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 5) Thermal Reference, Lead-to-Ambient (Note 5) Thermal Reference, Junction-to-Cathode Lead (Note 5) Total Device Dissipation (Note 6) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 6) Thermal Reference, Lead-to-Ambient (Note 6) Thermal Reference, Junction-to-Cathode Lead (Note 6) Total Device Dissipation (Note 7) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 7) Thermal Reference, Lead-to-Ambient (Note 7) Thermal Reference, Junction-to-Cathode Lead (Note 7) Total Device Dissipation (Note 8) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 8) Thermal Reference, Lead-to-Ambient (Note 8) Thermal Reference, Junction-to-Cathode Lead (Note 8) Total Device Dissipation (Note 9) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 9) Thermal Reference, Lead-to-Ambient (Note 9) Thermal Reference, Junction-to-Cathode Lead (Note 9) Total Device Dissipation (Note 10) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 10) Thermal Reference, Lead-to-Ambient (Note 10) Thermal Reference, Junction-to-Cathode Lead (Note 10) Junction and Storage Temperature Range Symbol PD RJA RLA RJL PD RJA RLA RJL PD RJA RLA RJL PD RJA RLA RJL PD RJA RLA RJL PD RJA RLA RJL TJ, Tstg Max 208 1.66 600 404 196 227 1.8 550 390 160 347 2.8 360 200 160 368 2.9 340 208 132 436 3.5 287 139 148 463 3.7 270 150 120 -55 to +150 Unit mW mW/C C/W C/W C/W mW mW/C C/W C/W C/W mW mW/C C/W C/W C/W mW mW/C C/W C/W C/W mW mW/C C/W C/W C/W mW mW/C C/W C/W C/W C THERMAL CHARACTERISTICS 5. FR-4 @ 100 mm2, 1 oz. copper traces, still air. 6. FR-4 @ 100 mm2, 2 oz. copper traces, still air. 7. FR-4 @ 300 mm2, 1 oz. copper traces, still air. 8. FR-4 @ 300 mm2, 2 oz. copper traces, still air. 9. FR-4 @ 500 mm2, 1 oz. copper traces, still air. 10. FR-4 @ 500 mm2, 2 oz. copper traces, still air. NOTE: Lead measurements are made by non-contact methods such as IR with treated surface to increase emissivity to 0.9. Lead temperature measurement by attaching a T/C may yield values as high as 30% higher C/W values based upon empirical measurements and method of attachment. http://onsemi.com 2 NSI45015WT1G Minimum FR-4 @ 300 mm2 1 oz Copper Trace, Still Air Ireg(SS), STEADY STATE CURRENT (mA) 60 Ireg, CURRENT REGULATION (mA) 50 40 30 20 10 0 -10 -20 -10 VR 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 DC Test Steady State, Still Air 5 6 7 8 9 10 TA = 25C TA = 85C TA = -40C TYPICAL PERFORMANCE CURVES [ -0.0381 mA/C [ -0.0316 mA/C 0 10 20 30 40 50 60 Vak, ANODE-CATHODE VOLTAGE (V) Vak, ANODE-CATHODE VOLTAGE (V) Figure 1. General Performance Curve for CCR Ireg(SS), STEADY STATE CURRENT (mA) 17.5 Ireg(P), PULSE CURRENT (mA) 17 16.5 16 15.5 15 14.5 14 Non-Repetitive Pulse Test 3 4 5 6 7 8 9 10 TA = 25C 18 17 16 15 14 13 12 12 Figure 2. Steady State Current (Ireg(SS)) vs. Anode-Cathode Voltage (Vak) Vak @ 7.5 V TA = 25C 13 14 15 16 17 18 19 20 Vak, ANODE-CATHODE VOLTAGE (V) Ireg(P), PULSE CURRENT (mA) Figure 3. Pulse Current (Ireg(P)) vs. Anode-Cathode Voltage (Vak) 16.5 Ireg, CURRENT REGULATION (mA) PD, POWER DISSIPATION (mW) Vak @ 7.5 V TA = 25C 16 800 700 600 500 Figure 4. Steady State Current vs. Pulse Current Testing 500 mm2/2 oz 500 mm2/1 oz mm2/1 300 mm2/2 oz oz 100 mm2/2 oz 100 mm2/1 oz 15.5 400 300 300 200 15 14.5 0 5 10 15 20 25 30 35 100 -40 -20 0 20 40 60 80 TIME (s) TA, AMBIENT TEMPERATURE (C) Figure 5. Current Regulation vs. Time Figure 6. Power Dissipation vs. Ambient Temperature @ TJ = 1505C http://onsemi.com 3 NSI45015WT1G APPLICATIONS D1 Anode Cathode + - LED LED HF3-R5570 LED HF3-R5570 + - Q1 Q2 Qx D1 Anode Q1 Q2 Qx Cathode Vin LED HF3-R5570 LED HF3-R5570 LED HF3-R5570 LED HF3-R5570 LED HF3-R5570 LED HF3-R5570 LED HF3-R5570 LED HF3-R5570 LED HF3-R5570 Vin HF3-R5570 Figure 7. Typical Application Circuit (10 mA each LED String) Number of LED's that can be connected is determined by: D1 is a reverse battery protection diode LED's = ((Vin - QX VF + D1 VF)/LED VF) Example: Vin = 12 Vdc, QX VF = 3.5 Vdc, D1VF = 0.7 V LED VF = 2.2 Vdc @ 15 mA (12 Vdc - 4.2 Vdc)/2.2 Vdc = 3 LEDs in series. Figure 8. Typical Application Circuit (30 mA each LED String) Number of LED's that can be connected is determined by: D1 is a reverse battery protection diode Example: Vin = 12 Vdc, QX VF = 3.5 Vdc, D1VF = 0.7 V LED VF = 2.6 Vdc @ 30 mA (12 Vdc - (3.5 + 0.7 Vdc))/2.6 Vdc = 3 LEDs in series. Number of Drivers = LED current/15 mA 45 mA/15 mA = 3 Drivers (Q1, Q2, Q3) http://onsemi.com 4 NSI45015WT1G Comparison of LED Circuit using CCR vs. Resistor Biasing ON Semiconductor CCR Design Constant brightness over full Automotive Supply Voltage (more efficient), see Figure 9 Little variation of power in LEDs, see Figure 10 Constant current extends LED strings lifetime, see Figure 9 Current decreases as voltage increases, see Figure 9 Current supplied to LED string decreases as temperature increases (self-limiting), see Figure 2 No resistors needed Fewer components, less board space required Surface mount component Resistor Biased Design Large variations in brightness over full Automotive Supply Voltage Large variations of current (power) in LEDs High Supply Voltage/ Higher Current in LED strings limits lifetime Current increases as voltage increases LED current decreases as temperature increases Requires costly inventory (need for several resistor values to match LED intensity) More components, more board space required Through-hole components 20 TA = 25C 130 120 110 Pd LEDs (mW) 100 90 80 70 60 50 40 16 30 9 TA = 25C Circuit Current with 15 CCR Device LED Power with CCR Device I (mA) 10 5 Circuit Current with 500 W 0 Representative Test Data for Figure 7 Circuit, Current of LEDs, FR-4 @ 300 mm2, 1 oz Copper Area 12 13 14 15 LED Power with 500 W Representative Test Data for Figure 7 Circuit, Pd of LEDs, FR-4 @ 300 mm2, 1 oz Copper Area 11 12 13 14 15 16 9 10 11 10 Vin (V) Vin (V) Figure 9. Series Circuit Current Current Regulation: Pulse Mode (Ireg(P)) vs DC Steady-State (Ireg(SS)) Figure 10. LED Power There are two methods to measure current regulation: Pulse mode (Ireg(P)) testing is applicable for factory and incoming inspection of a CCR where test times are a minimum. (t < 300 ms). DC Steady-State (Ireg(SS)) testing is applicable for application verification where the CCR will be operational for seconds, minutes, or even hours. ON Semiconductor has correlated the difference in Ireg(P) to Ireg(SS) for stated board material, size, copper area and copper thickness. Ireg(P) will always be greater than Ireg(SS) due to the die temperature rising during Ireg(SS). This heating effect can be minimized during circuit design with the correct selection of board material, metal trace size and weight, for the operating current, voltage, board operating temperature (TA) and package. (Refer to Thermal Characteristics table). http://onsemi.com 5 NSI45015WT1G PACKAGE DIMENSIONS SOD-123 CASE 425-04 ISSUE E D A A1 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS DIM MIN NOM MAX A 0.94 1.17 1.35 A1 0.00 0.05 0.10 b 0.51 0.61 0.71 ----c 0.15 D 1.40 1.60 1.80 E 2.54 2.69 2.84 HE 3.56 3.68 3.86 ----L 0.25 STYLE 1: PIN 1. CATHODE 2. ANODE MIN 0.037 0.000 0.020 --0.055 0.100 0.140 0.010 INCHES NOM 0.046 0.002 0.024 --0.063 0.106 0.145 --MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --- HE 2.36 0.093 4.19 0.165 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 EE EE EE EE EE EE AAAA AAAA 2 E L C b SOLDERING FOOTPRINT* 0.91 0.036 1.22 0.048 SCALE 10:1 mm inches NSI45015W/D |
Price & Availability of NSI45015WT1G
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |